Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells

Different conductive films are used as p‐GaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200‐nm thick indium‐tin oxide (ITO) transparent spreading layers shows a very small decrease in fill fac...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-01, Vol.208 (1), p.199-201
Main Authors: Zheng, Xinhe, Tang, Longjuan, Zhang, Dongyan, Dong, Jianrong, Yang, Hui
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
contacts
Electronics
Energy
Exact sciences and technology
InGaN
ITO
Natural energy
Optoelectronic devices
photovoltaic
Photovoltaic conversion
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solar cells
Solar cells. Photoelectrochemical cells
Solar energy
spreading layer
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Summary:Different conductive films are used as p‐GaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200‐nm thick indium‐tin oxide (ITO) transparent spreading layers shows a very small decrease in fill factor compared to those with the 3‐nm Ni/3‐nm Au semitransparent metal, but the former demonstrates an enhancement of short‐circuit current density by 24% due to the increased amount of light that reaches the solar cell. This improvement in usable light is shown by the increase in transmission and external quantum efficiency.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026289