Implantation of single crystalline iron garnet thin films with He+, B+, and Si+ ions

The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He+, B+, and Si+ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect formation from the electr...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-09, Vol.208 (9), p.2108-2114
Main Authors: Ostafiychuk, B. K., Fedoriv, V. D., Yaremiy, I. P., Garpul, O. Z., Kurovets, V. V., Yaremiy, I. C.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
defect formation
electronic and nuclear energy losses
Exact sciences and technology
ion implantation
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
YIG
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Summary:The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He+, B+, and Si+ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect formation from the electronic energy losses of ion implants decelerating in the target. High temperature diffractometry demonstrates the existence of two centers of disorder in the crystal lattices of ion‐implanted thin films: one due to the defect formation from the electronic energy losses and the other – from the nuclear energy losses of the implant ions.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026749