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Implantation of single crystalline iron garnet thin films with He+, B+, and Si+ ions
The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He+, B+, and Si+ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect formation from the electr...
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Published in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2011-09, Vol.208 (9), p.2108-2114 |
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container_end_page | 2114 |
container_issue | 9 |
container_start_page | 2108 |
container_title | Physica status solidi. A, Applications and materials science |
container_volume | 208 |
creator | Ostafiychuk, B. K. Fedoriv, V. D. Yaremiy, I. P. Garpul, O. Z. Kurovets, V. V. Yaremiy, I. C. |
description | The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He+, B+, and Si+ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect formation from the electronic energy losses of ion implants decelerating in the target. High temperature diffractometry demonstrates the existence of two centers of disorder in the crystal lattices of ion‐implanted thin films: one due to the defect formation from the electronic energy losses and the other – from the nuclear energy losses of the implant ions. |
doi_str_mv | 10.1002/pssa.201026749 |
format | article |
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High temperature diffractometry demonstrates the existence of two centers of disorder in the crystal lattices of ion‐implanted thin films: one due to the defect formation from the electronic energy losses and the other – from the nuclear energy losses of the implant ions.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201026749</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; defect formation ; electronic and nuclear energy losses ; Exact sciences and technology ; ion implantation ; Ion radiation effects ; Physical radiation effects, radiation damage ; Physics ; Structure of solids and liquids; crystallography ; YIG</subject><ispartof>Physica status solidi. A, Applications and materials science, 2011-09, Vol.208 (9), p.2108-2114</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. 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High temperature diffractometry demonstrates the existence of two centers of disorder in the crystal lattices of ion‐implanted thin films: one due to the defect formation from the electronic energy losses and the other – from the nuclear energy losses of the implant ions.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>defect formation</subject><subject>electronic and nuclear energy losses</subject><subject>Exact sciences and technology</subject><subject>ion implantation</subject><subject>Ion radiation effects</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>YIG</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhC0EEqVw5ewLp5LiR2wnx1LRh3hKKeJoOYndGtw0siOV_ntSBUXcOKx2pZ1vRhoArjEaY4TIXR2CGhOEEeEiTk_AACecRJzi9LS_EToHFyF8IhSzWOABWC23tVNVoxq7q-DOwGCrtdOw8IfQKOdspaH17WutfKUb2GxsBY112wD3ttnAhR7dwvt2VFXCzI5gaxMuwZlRLuir3z0E77OH1XQRPb3Ol9PJU1RQJtIowYxhItKYFETkIsexwUoRTjjlCFGeCKIFLUpTKiLiPEmEKGhuGCnLBFOG6BCMO9_C70Lw2sja263yB4mRPHYij53IvpMWuOmAWoVCOeNVVdjQUyRmOE1T2urSTre3Th_-cZVvWTb5mxF1rA2N_u5Z5b8kF1Qw-fEyl9l0htEjj-Uz_QHxFn_y</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Ostafiychuk, B. 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Status Solidi A</addtitle><date>2011-09</date><risdate>2011</risdate><volume>208</volume><issue>9</issue><spage>2108</spage><epage>2114</epage><pages>2108-2114</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>The mechanisms of defect formation in single crystalline epitaxial iron garnet thin films implanted with intermediate energy He+, B+, and Si+ ions have been investigated. X‐ray diffraction and modeling of the implantation process are used to show the effectiveness of defect formation from the electronic energy losses of ion implants decelerating in the target. High temperature diffractometry demonstrates the existence of two centers of disorder in the crystal lattices of ion‐implanted thin films: one due to the defect formation from the electronic energy losses and the other – from the nuclear energy losses of the implant ions.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.201026749</doi><tpages>7</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties defect formation electronic and nuclear energy losses Exact sciences and technology ion implantation Ion radiation effects Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography YIG |
title | Implantation of single crystalline iron garnet thin films with He+, B+, and Si+ ions |
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