Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE

a‐plane InN nanostructures were fabricated on a hole‐patterned a‐plane GaN template by electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy (ECR‐MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a suf...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2012-03, Vol.209 (3), p.447-450
Main Authors: Araki, Tsutomu, Yamashita, Shuhei, Yamaguchi, Tomohiro, Yoon, Euijoon, Nanishi, Yasushi
Format: Article
Language:English
Subjects:
InN
MBE
nanostructure
non-polar
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Summary:a‐plane InN nanostructures were fabricated on a hole‐patterned a‐plane GaN template by electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy (ECR‐MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a‐plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N‐polar [000–1] direction is higher than those in the In‐polar [0001] and [1–100] directions. a‐plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions. SEM image of position‐controlled a‐plane InN nanostructures grown by ECR‐MBE on a hole‐patterned a‐plane GaN template.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201100520