Enhanced threshold voltage of Zn-doped Ge 2 Sb 2 Te 5 phase-change memory deposited by electron-beam evaporation: Enhanced threshold voltage of Zn-doped Ge 2 Sb 2 Te 5 phase-change memory

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-12, Vol.210 (12), p.2650-2655
Main Authors: Li, Rui, Jiang, Yifan, Xu, Ling, Ma, Zhongyuan, Yang, Fei, Xu, Jun, Su, Weining
Format: Article
Language:English
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ISSN:1862-6300
DOI:10.1002/pssa.201329381