InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy: InAs/GaAs QD lasers with GaP strain-compensation layers

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2016-04, Vol.213 (4), p.958-964
Main Authors: Kageyama, Takeo, Watanabe, Katsuyuki, Vo, Quoc Huy, Takemasa, Keizo, Sugawara, Mitsuru, Iwamoto, Satoshi, Arakawa, Yasuhiko
Format: Article
Language:English
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ISSN:1862-6300
DOI:10.1002/pssa.201532555