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Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method

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Bibliographic Details
Published in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2019-03, Vol.216 (5)
Main Authors:	Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Oikawa, Kento, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi
Format:	Article
Language:	English
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Online Access:	Get full text
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