Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2019-03, Vol.216 (5)
Main Authors: Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Oikawa, Kento, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi
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title Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method
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