Electronic properties of Si/SiGe ultrathin quantum well superlattices

Using the self‐consistent and perturbative method of Jaros and the full potential linear muffin tin orbitals (FP‐LMTO) method coupled to a plane wave (PLW) basis in the interstitial regions, we calculate the bandstructure of some ultrathin Sim/(SiGe)n quantum well superlattices, m and n being the nu...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. B. Basic research 2003-01, Vol.235 (1), p.189-194
Main Authors: Rached, D., Benkhettou, N., Sekkal, N.
Format: Article
Language:English
Subjects:
71.15.-m
73.21.Cd
73.21.Fg
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Methods of electronic structure calculations
Physics
Plane-wave methods (including augmented plane-wave method)
Quantum wells
Superlattices
Theories and models of many electron systems
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using the self‐consistent and perturbative method of Jaros and the full potential linear muffin tin orbitals (FP‐LMTO) method coupled to a plane wave (PLW) basis in the interstitial regions, we calculate the bandstructure of some ultrathin Sim/(SiGe)n quantum well superlattices, m and n being the numbers of atomic layers. The results show that in these systems the bandgap is indirect and that these superlattices have a type II potential configuration.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200301356