Resistivity measurements of Mo 6 S 3 I 6 nanowire networks

We present measurements of resistivity on Mo 6 S 3 I 6 nanowire networks as a function of temperature, moisture and high‐temperature processing conditions. The room‐temperature conductivity of as‐grown material is s 300 K ∼ 0.04 S/m with a linear I – V characteristic. The temperature dependence of c...

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Bibliographic Details
Published in:physica status solidi (b) 2006-11, Vol.243 (13), p.3306-3310
Main Authors: Berčič, B., Pirnat, U., Kusar, P., Dvorsek, D., Vengust, D., Mihailovic, D.
Format: Article
Language:English
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Summary:We present measurements of resistivity on Mo 6 S 3 I 6 nanowire networks as a function of temperature, moisture and high‐temperature processing conditions. The room‐temperature conductivity of as‐grown material is s 300 K ∼ 0.04 S/m with a linear I – V characteristic. The temperature dependence of conductivity of pristine samples closely follows the expression s = s 0 exp (– T 0 / T ) b , where b = 1/4. Removal of interstitial iodine from the network by annealing in vacuum gives rise to a cross‐over to b = 1/2 and an increase in conductivity. Different scenarios for observed cross‐over are discussed. The introduction of water vapour leads to a decrease in conductivity and reveals that the resistivity of the network is sensitive to interstitial water molecules, which is interesting for potential chemical sensor applications. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200669203