Phase separation in SiO x films annealed under enhanced hydrostatic pressure

The effect of enhanced hydrostatic pressure (HP, (10–12) × 10 8 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non‐stoichiometric SiO x mo...

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Bibliographic Details
Published in:physica status solidi (b) 2008-12, Vol.245 (12), p.2756-2760
Main Authors: Rudko, G. Yu, Maidanchuk, I. Yu, Indutnyy, I. Z., Misiuk, A., Gule, E. G., Shepeliavyi, P. E.
Format: Article
Language:English
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Summary:The effect of enhanced hydrostatic pressure (HP, (10–12) × 10 8 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non‐stoichiometric SiO x most efficiently at about 450 °C. In spite of enhanced SiO x decomposition, visible photoluminescence appears in HP‐treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 10 5 Pa). Contrary to that, application of HP results in essential enhancement of near‐infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure‐stimulated crystallization of Si inclusions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200844049