Vibrational spectroscopy of SiO on Si(111)

The growth of ultrathin SiO layers on clean Si(111) was observed by in situ infrared spectroscopy under ultra‐high vacuum conditions. SiO was deposited by thermal evaporation of SiO powder from a Knudsen cell. A large shift of the SiO main vibrational line, from about 864 cm−1 for sub‐monolayer cove...

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Published in:Physica status solidi. B. Basic research 2010-09, Vol.247 (9), p.2179-2184
Main Authors: Klevenz, Markus, Wetzel, Steffen, Trieloff, Mario, Gail, Hans-Peter, Pucci, Annemarie
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
infrared spectroscopy
Lattice dynamics
lattice properties
Phonons in low-dimensional structures and small particles
Physics
silicon monoxide
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description The growth of ultrathin SiO layers on clean Si(111) was observed by in situ infrared spectroscopy under ultra‐high vacuum conditions. SiO was deposited by thermal evaporation of SiO powder from a Knudsen cell. A large shift of the SiO main vibrational line, from about 864 cm−1 for sub‐monolayer coverage up to the bulk value of SiO at about 982 cm−1 for thicknesses above 10 Å, was observed. The extraordinary low vibrational frequencies for species at the SiO–Si interface corroborate recently published theoretical results for SiO adsorption on Si and for the SiO2–Si interface.
doi_str_mv 10.1002/pssb.200945550
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
infrared spectroscopy
Lattice dynamics
lattice properties
Phonons in low-dimensional structures and small particles
Physics
silicon monoxide
title Vibrational spectroscopy of SiO on Si(111)
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