Spectra and energy levels of Eu3+ in cubic phase Gd2O3

• Published in: Physica status solidi. B. Basic research 2010-07, Vol.247 (7), p.1807-1813
• Main Authors: Smith, Eric R., Gruber, John B., Wellenius, Patrick, Muth, John F., Everitt, Henry O.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Crystal and ligand fields; crystal field calculations; Electron states; Exact sciences and technology; Level splitting and interactions; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductors; photoluminescence; Physics; rare earth doped semiconductors
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200945602

In pulsed laser deposition of the sesquioxide semiconductor Gd2O3, adjusting the chamber oxygen pressure controls the crystalline structure of the host. This technique was used to deposit thin films of nominally 1.6% by weight europium‐doped, cubic phase Gd2O3 using 50 mTorr of oxygen. Structural measurements using high‐resolution transmission electron microscopy and selected area electron diffraction confirm the films were polycrystalline, cubic phase Eu:Gd2O3. The spectroscopic assignment of emission lines to specific radiative transitions within the trivalent Eu ion is confirmed by theoretical analysis of the appropriate crystal field Hamiltonian. Detailed crystal‐field splittings are presented for the 5DJ=0‐2 and 7FJ=0‐5 multiplet manifolds of Eu3+ in this host material.