Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas pressure to i...

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Bibliographic Details
Published in:physica status solidi (b) 2012-04, Vol.249 (4), p.779-783
Main Authors: Kim, Jung Gon, Kamei, Yasuhito, Kimura, Atsuhito, Hasuike, Noriyuki, Harima, Hiroshi, Kisoda, Kenji, Liu, Yu Huai, Matsuoka, Takashi
Format: Article
Language:English
Subjects:
crystalline quality
high pressures
indium nitride
Raman scattering
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Summary:Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213 kPa, and furthermore to 320 kPa. This tendency was also confirmed by a structural characterization by X‐ray diffraction.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201147452