MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

• Published in: physica status solidi (b) 2018-12, Vol.255 (12), p.n/a
• Main Authors: Sala, Elisa M., Arikan, Ismail F., Bonato, Leo, Bertram, Frank, Veit, Peter, Christen, Jürgen, Strittmatter, André, Bimberg, Dieter
• Format: Article
• Language: English
• Subjects: AlP barrier; GaP; InGaSb; MOVPE growth; nanoscale memory; quantum dots
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.201800182

The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb‐flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb‐flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD‐luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p‐diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep‐level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross‐section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE‐grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD‐based nano‐memories. InGaSb/GaP(001) quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are investigated. The QD growth parameters are linked with their structural, optical, and electrical properties, leading to an increase of the hole storage time to almost 1 h by a factor of 14 compared to the previous record value. This value represents to date the record for MOVPE‐grown QDs.