GaAsBi: From Molecular Beam Epitaxy Growth to Devices

On the background of a molecular beam epitaxy (MBE) machine viewport, a simplified representation of the Bi surface hopping mechanism is depicted for a GaAs surface exposed to an oscillating Bi flux. The exact behaviour of Bi on a growing surface is still the subject of some debate and oscillating f...

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Bibliographic Details
Published in:physica status solidi (b) 2022-02, Vol.259 (2), p.n/a
Main Authors: Richards, Robert D., Bailey, Nicholas J., Liu, Yuchen, Rockett, Thomas B. O., Mohmad, Abdul R.
Format: Article
Language:English
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Summary:On the background of a molecular beam epitaxy (MBE) machine viewport, a simplified representation of the Bi surface hopping mechanism is depicted for a GaAs surface exposed to an oscillating Bi flux. The exact behaviour of Bi on a growing surface is still the subject of some debate and oscillating fluxes appear to enhance Bi incorporation, potentially due to the increased likelihood of Bi – Ga bonds forming. These mechanisms are discussed in the Review by Robert D. Richards, Abdul R. Mohmad, and co‐workers (see article number 2100330).
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.202270004