Thickness‐dependent electroforming behavior of ultra‐thin Ta 2 O 5 resistance switching layer

Electroforming behaviours of Ta 2 O 5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta 2 O 5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta 2 O 5 thickness. The electroforming with negat...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2015-06, Vol.9 (6), p.362-365
Main Authors: Park, Tae Hyung, Song, Seul Ji, Kim, Hae Jin, Kim, Soo Gil, Chung, Suock, Kim, Beom Yong, Lee, Kee Jeung, Kim, Kyung Min, Choi, Byung Joon, Hwang, Cheol Seong
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electroforming behaviours of Ta 2 O 5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5–2.0 nm) of Ta 2 O 5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta 2 O 5 thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field‐ driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094–0.14 eV) was favourably compared with the hopping energy of electrons from the V O site to a nearby Ta site. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201510110