Direct growth of graphene film on piezoelectric La 3 Ga 5.5 Ta 0.5 O 14 crystal

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2016-08, Vol.10 (8), p.639-644
• Main Authors: Brzhezinskaya, Maria, Irzhak, Artemii, Irzhak, Dmitry, Kang, Tae Won, Kononenko, Oleg, Matveev, Viktor, Panin, Gennady, Roshchupkin, Dmitry
• Format: Article
• Language: English
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.201600122

For the first time, a few layer graphene was grown on the surface of the polar X ‐cut (110) of a piezoelectric La 3 Ga 5.5 Ta 0.5 O 14 crystal by the CVD method. This polar X ‐cut is characterized by a good matching of the crystal lattice parameters of La 3 Ga 5.5 Ta 0.5 O 14 and two‐dimensional graphene crystal, as well as the presence of piezoelectric fields on the surface of the substrate, which could affect the graphene growth process. Raman spectroscopy investigation has shown the ability for direct growth of graphene on the piezoelectric crystal. The NEXAFS spectroscopy studies of the film grown on the surface of the X ‐cut of an La 3 Ga5 .5 Ta 0.5 O 14 crystal also confirmed that the grown film is graphene. Moreover, the NEXAFS spectra enable the conclusion that additional electron states are formed as a result of chemical bonding between the atoms of graphene and the substrate which proceeds through hybridization of the valence electron states of the substrate and graphene atoms. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)