Heteroepitaxial α‐Ga 2 O 3 Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure

This study explores the potential of 700‐nm‐thick heteroepitaxial α‐Ga 2 O 3 thin films on c‐plane sapphire substrates for X‐ray detector applications. The crystal quality and optical bandgap of the heteroepitaxial α‐Ga 2 O 3 thin films are comparable to those of high‐quality α‐Ga 2 O 3 thin films....

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2024-08
Main Authors: Kim, Minje, Kim, Sunjae, Park, Ji‐Hyeon, Cho, Hyeon Gu, Gihm, Se Hoon, Jeon, Dae‐Woo, Hwang, Wan Sik
Format: Article
Language:English
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Summary:This study explores the potential of 700‐nm‐thick heteroepitaxial α‐Ga 2 O 3 thin films on c‐plane sapphire substrates for X‐ray detector applications. The crystal quality and optical bandgap of the heteroepitaxial α‐Ga 2 O 3 thin films are comparable to those of high‐quality α‐Ga 2 O 3 thin films. The α‐Ga 2 O 3 thin film X‐ray detector with a metal–semiconductor–metal structure exhibits a charge neutral point shift, resulting in a short‐circuit current density of 9.07 nA cm −2 and an open‐circuit voltage of –1.2 V. The detector achieves the highest signal‐to‐noise ratio of 973 at 0 V, while the maximum sensitivity (14.7 μC Gy air −1 cm −2 ) occurs at 10 V. The proposed X‐ray detector demonstrates a reliable transient response and long‐term robustness, suggesting the promise of heteroepitaxial α‐Ga 2 O 3 for low‐cost, high‐quality, large‐area X‐ray detectors.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202400193