8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm 2 /Vs and High Level of Uniformity on the Large Size Substrates

We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.78-81
Main Authors: Tsubuku, Masashi, Watakabe, Hajime, Sasaki, Toshinari, Tamaru, Takaya, Onodera, Ryo, Mochizuki, Marina, Kimura, Hiroyuki, Kawashima, Emi, Sasaki, Daichi, Tsuruma, Yuki
Format: Article
Language:English
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Summary:We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16492