37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers

We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.530-533
Main Authors: Cho, Hyunmin, Kim, Daehyun, Lee, Seunga, Yoo, Chuljong, Sim, Youngchul
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-crossref_primary_10_1002_sdtp_166103
container_end_page 533
container_issue 1
container_start_page 530
container_title SID International Symposium Digest of technical papers
container_volume 54
creator Cho, Hyunmin
Kim, Daehyun
Lee, Seunga
Yoo, Chuljong
Sim, Youngchul
description We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs.
doi_str_mv 10.1002/sdtp.16610
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_sdtp_16610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_sdtp_16610</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1002_sdtp_166103</originalsourceid><addsrcrecordid>eNqVjz1OxDAQhS0EEuGn4QSukbLYyeIl20IQxRZIbEFneZ3xZlDiRB5vEWg4AmfkJDiIC1CN3ui9T_oYu5JiIYUobqiJ40IqJcURywqp7nIhb6tjlglRrfJKqddTdkb0JkRZLpdVxj7K1ffnV7HmD0gR_f6A1ELDn80IYc1r59AieDvx2rfGW-jBRz44_nLY9WjD4NOa8B34BvdtTKHuMc6gBBwaIL6b-Dbg2EF6QAc2BrR8YyYIdMFOnOkILv_uObt-rLf3T3niEgVwegzYmzBpKfSsp2c9_atX_qv8A5bNW7c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers</title><source>Wiley:Jisc Collections:Wiley Read and Publish Open Access 2024-2025 (reading list)</source><creator>Cho, Hyunmin ; Kim, Daehyun ; Lee, Seunga ; Yoo, Chuljong ; Sim, Youngchul</creator><creatorcontrib>Cho, Hyunmin ; Kim, Daehyun ; Lee, Seunga ; Yoo, Chuljong ; Sim, Youngchul</creatorcontrib><description>We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.16610</identifier><language>eng</language><ispartof>SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.530-533</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1002_sdtp_166103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Cho, Hyunmin</creatorcontrib><creatorcontrib>Kim, Daehyun</creatorcontrib><creatorcontrib>Lee, Seunga</creatorcontrib><creatorcontrib>Yoo, Chuljong</creatorcontrib><creatorcontrib>Sim, Youngchul</creatorcontrib><title>37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers</title><title>SID International Symposium Digest of technical papers</title><description>We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs.</description><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNqVjz1OxDAQhS0EEuGn4QSukbLYyeIl20IQxRZIbEFneZ3xZlDiRB5vEWg4AmfkJDiIC1CN3ui9T_oYu5JiIYUobqiJ40IqJcURywqp7nIhb6tjlglRrfJKqddTdkb0JkRZLpdVxj7K1ffnV7HmD0gR_f6A1ELDn80IYc1r59AieDvx2rfGW-jBRz44_nLY9WjD4NOa8B34BvdtTKHuMc6gBBwaIL6b-Dbg2EF6QAc2BrR8YyYIdMFOnOkILv_uObt-rLf3T3niEgVwegzYmzBpKfSsp2c9_atX_qv8A5bNW7c</recordid><startdate>202306</startdate><enddate>202306</enddate><creator>Cho, Hyunmin</creator><creator>Kim, Daehyun</creator><creator>Lee, Seunga</creator><creator>Yoo, Chuljong</creator><creator>Sim, Youngchul</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>202306</creationdate><title>37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers</title><author>Cho, Hyunmin ; Kim, Daehyun ; Lee, Seunga ; Yoo, Chuljong ; Sim, Youngchul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1002_sdtp_166103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Hyunmin</creatorcontrib><creatorcontrib>Kim, Daehyun</creatorcontrib><creatorcontrib>Lee, Seunga</creatorcontrib><creatorcontrib>Yoo, Chuljong</creatorcontrib><creatorcontrib>Sim, Youngchul</creatorcontrib><collection>CrossRef</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Hyunmin</au><au>Kim, Daehyun</au><au>Lee, Seunga</au><au>Yoo, Chuljong</au><au>Sim, Youngchul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2023-06</date><risdate>2023</risdate><volume>54</volume><issue>1</issue><spage>530</spage><epage>533</epage><pages>530-533</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs.</abstract><doi>10.1002/sdtp.16610</doi></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.530-533
issn 0097-966X
2168-0159
language eng
recordid cdi_crossref_primary_10_1002_sdtp_16610
source Wiley:Jisc Collections:Wiley Read and Publish Open Access 2024-2025 (reading list)
title 37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T12%3A40%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=37%E2%80%902:%20Distinguished%20Paper:%20Efficiency%20Enhancement%20of%20Submicron%E2%80%90size%20Light%E2%80%90Emitting%20Diodes%20by%20Triple%20Dielectric%20Layers&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Cho,%20Hyunmin&rft.date=2023-06&rft.volume=54&rft.issue=1&rft.spage=530&rft.epage=533&rft.pages=530-533&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.16610&rft_dat=%3Ccrossref%3E10_1002_sdtp_16610%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-crossref_primary_10_1002_sdtp_166103%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true