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43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO
In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared wi...
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Published in: | SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.623-626 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this study, an oxide semiconductor vertical field‐effect transistor (VFET) was developed and VFETs with a channel length of 0.5 mm on a glass substrate with small variation were successfully fabricated. This technology enables displays to have high resolution and low power consumption compared with the use of low‐temperature polysilicon. |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1002/sdtp.16635 |