P‐132: Carriers Transport Dynamics in Quantum‐Dot Light‐Emitting Diode by Transient Electroluminescence Analysis

The outstanding performance of quantum dots light emitting diodes (QLED), like high color purity, high brightness, high efficiency, and low fabrication cost, has attracted significant attention from academic researchers and industry. A great improvement has been established in QLED performance, but...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.1358-1361
Main Authors: Liao, Zebing, Mallem, Kumar, Prodanov, Maksym F., Kang, Chengbin, Gao, Yiyang, Song, Jianxin, Vashchenko, Valerii V., Srivastava, Abhishek K.
Format: Article
Language:English
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Summary:The outstanding performance of quantum dots light emitting diodes (QLED), like high color purity, high brightness, high efficiency, and low fabrication cost, has attracted significant attention from academic researchers and industry. A great improvement has been established in QLED performance, but a few works focus on investigating the operation dynamic mechanism that is critical for understanding the device deterioration and further performance improvement. Here, we utilized transient electroluminescence (TREL) to investigate the carrier's transport dynamics. We believe this method based on TREL will contribute to understanding the carriers' transport, especially for hole transport and fabricating high‐performance QLED devices. Based on the analysis results, we also demonstrated a passive matrix (PM) electroluminescence display panel with high brightness and vivid color.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.16835