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Application of AFM in microscopy and fabrication of micro/nanostructures

In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was pr...

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Bibliographic Details
Published in:Surface and interface analysis 2002-08, Vol.34 (1), p.352-355
Main Authors: Lopour, F., Kalousek, R., Škoda, D., Spousta, J., Matějka, F., Šikola, T.
Format: Article
Language:English
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Summary:In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half‐width of the lines did not depend linearly on this voltage. The results are useful for experiments in the fabrication of nanoelectronic devices (e.g. single‐electron transistors). Copyright © 2002 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.1315