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Application of AFM in microscopy and fabrication of micro/nanostructures
In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was pr...
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Published in: | Surface and interface analysis 2002-08, Vol.34 (1), p.352-355 |
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container_title | Surface and interface analysis |
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creator | Lopour, F. Kalousek, R. Škoda, D. Spousta, J. Matějka, F. Šikola, T. |
description | In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half‐width of the lines did not depend linearly on this voltage. The results are useful for experiments in the fabrication of nanoelectronic devices (e.g. single‐electron transistors). Copyright © 2002 John Wiley & Sons, Ltd. |
doi_str_mv | 10.1002/sia.1315 |
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By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half‐width of the lines did not depend linearly on this voltage. The results are useful for experiments in the fabrication of nanoelectronic devices (e.g. single‐electron transistors). Copyright © 2002 John Wiley & Sons, Ltd.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.1315</identifier><identifier>CODEN: SIANDQ</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>AFM fabrication ; Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; local anodic oxidation ; Materials science ; Metals. 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Interface Anal</addtitle><description>In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half‐width of the lines did not depend linearly on this voltage. The results are useful for experiments in the fabrication of nanoelectronic devices (e.g. single‐electron transistors). Copyright © 2002 John Wiley & Sons, Ltd.</description><subject>AFM fabrication</subject><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>local anodic oxidation</subject><subject>Materials science</subject><subject>Metals. 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subjects | AFM fabrication Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology local anodic oxidation Materials science Metals. Metallurgy Nanoscale materials and structures: fabrication and characterization oxide nanostructures Physics |
title | Application of AFM in microscopy and fabrication of micro/nanostructures |
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