In situ measurements of surface homogeneity of optical parameters of weakly absorbing thin films

• Published in: Surface and interface analysis 2002-08, Vol.34 (1), p.664-667
• Main Authors: Spousta, J., Urbánek, M., Chmelík, R., Jiruše, J., Zlámal, J., Navrátil, K., Nebojsa, A., Šikola, T.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; in situ monitoring; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; spectroscopic reflectometry; Structure and morphology; thickness; surface homogeneity; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0142-2421; 1096-9918
• DOI: 10.1002/sia.1383

In this paper an instrument based on combining the principles of both spectral and multiple‐wavelength reflectivity, designed by our group for in situ monitoring of the surface homogeneity of the thickness of weakly absorbing thin films, was tested in a series of ex situ and in situ experiments. The tests confirmed that it is a convenient tool for the in situ quasi‐real‐time monitoring of the surface homogeneity of the thicknesses of small‐area thin films (up to 1 cm2) during their etching and growth. Using this method, homogeneous growth of an SiO2 film with an average growth rate of 103 nm h−1 in one pilot point during deposition by ion beam sputtering of a quartz target was monitored in situ. On the other hand, the ion beam etching rate of the thermal SiO2 film was