Distribution of lattice parameters in strain-compensated MQW laser diodes

We have developed a lattice image analysis method that gives lattice parameters directly from the lattice image of multiple quantum well (MQW) laser diodes, in order to judge whether the strain‐compensated structure is adopted or not. The method can handle a large amount of image data. The noise ele...

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Bibliographic Details
Published in:Surface and interface analysis 2003-01, Vol.35 (1), p.108-112
Main Authors: Seo, Satoru, Matsuda, Takeyoshi, Mitose, Kengo, Iwase, Fusako
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
image analysis
InGaAsP
Lasers
Molecular electronics, nanoelectronics
MQW diodes
Optics
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
strain compensation
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Summary:We have developed a lattice image analysis method that gives lattice parameters directly from the lattice image of multiple quantum well (MQW) laser diodes, in order to judge whether the strain‐compensated structure is adopted or not. The method can handle a large amount of image data. The noise element in the lattice image is removed when the one‐dimensional Fourier transform is applied, and the lattice parameter value is obtained with good precision and good accuracy. The distribution of lattice parameters is valuable for evaluating the structure. Copyright © 2003 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.1504