Dependence of interfacial excess on the threshold value of the isoconcentration surface

The proximity histogram (or proxigram for short) is used for analyzing data collected by a three‐dimensional atom probe microscope. The interfacial excess of Re (2.41 ± 0.68 atoms nm−2) is calculated by employing a proxigram in a completely geometrically independent way for γ/γ′ interfaces in René N...

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Bibliographic Details
Published in:Surface and interface analysis 2004-05, Vol.36 (5-6), p.594-597
Main Authors: Yoon, Kevin E., Noebe, Ronald D., Hellman, Olof C., Seidman, David N.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
heterophase interface
interfacial segregation
Ni-based superalloy
Physics
three-dimensional atom probe microscopy
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Summary:The proximity histogram (or proxigram for short) is used for analyzing data collected by a three‐dimensional atom probe microscope. The interfacial excess of Re (2.41 ± 0.68 atoms nm−2) is calculated by employing a proxigram in a completely geometrically independent way for γ/γ′ interfaces in René N6, a third‐generation single‐crystal Ni‐based superalloy. A possible dependence of interfacial excess on the variation of the threshold value of an isoconcentration surface is investigated using the data collected for René N6 alloy. It is demonstrated that the dependence of the interfacial excess value on the threshold value of the isoconcentration surface is weak. Copyright © 2004 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.1708