Combined IR and XPS analysis of the native (1 0 0) surface of single‐crystalline silicon after HF aq etching

A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous di...

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Bibliographic Details
Published in:Surface and interface analysis 2007-10, Vol.39 (10), p.836-844
Main Authors: Cerofolini, G. F., Giussani, A., Carone Fabiani, F., Modelli, A., Mascolo, D., Ruggiero, D., Narducci, D., Romano, E.
Format: Article
Language:English
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Summary:A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH 2 and SiH 3 terminations, but contains (in addition to sub‐stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF aq ‐etched surface. Copyright © 2007 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.2599