Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs + and O 2 + ion beams

• Published in: Surface and interface analysis 2014-01, Vol.46 (1), p.36-41
• Main Authors: Chakraborty, B.R., Shard, A.G., Dalai, M.K., Sehgal, G.
• Format: Article
• Language: English
• ISSN: 0142-2421; 1096-9918
• DOI: 10.1002/sia.5343

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs + and O 2 + as sputter ion beams and Bi + as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs + ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O 2 + ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs + beam and O 2 + beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.