Influence of aluminum addition on structure, hardness, and oxidation resistance of Ta 1−x Al x N thin films

Ta 1−x Al x N thin films with 5, 15, and 40 at.% Al addition were co‐deposited by reactive magnetron sputtering and characterized by Rutherford backscattering spectroscopy (RBS), grazing angle X‐ray diffraction (GAXRD), X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nano...

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Published in:Surface and interface analysis 2024-11, Vol.56 (11), p.753-759
Main Authors: Santos, Jonh Yago Erikson, Dias, Iago Lemos, Rezende, Ronaldo Lima, de Oliveira, Givanilson Brito, da Silva Neto, Pedro Cardoso, Mendes, Fabiana Magalhães Teixeira, Hübler, Roberto, Tentardini, Eduardo Kirinus
Format: Article
Language:English
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Summary:Ta 1−x Al x N thin films with 5, 15, and 40 at.% Al addition were co‐deposited by reactive magnetron sputtering and characterized by Rutherford backscattering spectroscopy (RBS), grazing angle X‐ray diffraction (GAXRD), X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanohardness, and oxidation tests. GAXRD and XPS analyses showed, regardless of the % Al added, the non‐existence of ternary nitride Ta 1−x Al x N, but always as individual binary nitrides, TaN and AlN. Sample TaAlN_15 obtained the highest hardness and H 3 /E 2 values, possibly due to the AlN grains presence, which were efficient in distorting the TaN lattice. All samples failed oxidation tests at 873 K, showing that the Al addition was not efficient in improving this property for tantalum aluminum nitride thin films.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.7343