A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow

High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently...

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Bibliographic Details
Published in:Surface and interface analysis 1987-10, Vol.10 (8), p.367-383
Main Author: Keene, B. J.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.740100802