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A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow
High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently...
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Published in: | Surface and interface analysis 1987-10, Vol.10 (8), p.367-383 |
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container_title | Surface and interface analysis |
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creator | Keene, B. J. |
description | High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified. |
doi_str_mv | 10.1002/sia.740100802 |
format | article |
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J.</creator><creatorcontrib>Keene, B. J.</creatorcontrib><description>High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. 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Potentially important systems, for which there are no data, have been identified.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNp9ULFOwzAUtBBIlMLI7oE1YDtxHI9tgVKpgARFjNaLY1NDSCo7EPr3uGpVMTG909PdvXuH0Dkll5QQdhUcXIqMRFwQdoAGlMg8kZIWh2hAaMYSljF6jE5CeCeRkxb5AMEIe_PtTI9bi7ulweHLW9AGd6YJrm026-BqpyOEpsKuC7h0Dfg1hrpu1wH3rltGD2u8aTa6Ft-Dh-atbRy2ddufoiMLdTBnuzlEL7c3i8ldMn-cziajeaJTTljCOdPSEgulMcA5MAJc6Kpkua2otIwWOYX4mqa0opZzKrkudVoKkhXScJoOUbL11b4NIQZSK-8-Y1BFidr0o2I_at9P5F9s-SsIGmobM2sX9iIhclbEkoZIbGm9q836f0_1PBv9PbAL5EJnfvZK8B8qF6ng6vVhqtj1-ImNxUJN0l9U9YUk</recordid><startdate>198710</startdate><enddate>198710</enddate><creator>Keene, B. 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J.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Keene, B. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow</atitle><jtitle>Surface and interface analysis</jtitle><addtitle>Surf. Interface Anal</addtitle><date>1987-10</date><risdate>1987</risdate><volume>10</volume><issue>8</issue><spage>367</spage><epage>383</epage><pages>367-383</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><coden>SIANDQ</coden><abstract>High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.</abstract><cop>Sussex</cop><pub>John Wiley & Sons Ltd</pub><doi>10.1002/sia.740100802</doi><tpages>17</tpages></addata></record> |
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subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
title | A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow |
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