Loading…

A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow

High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently...

Full description

Saved in:
Bibliographic Details
Published in:Surface and interface analysis 1987-10, Vol.10 (8), p.367-383
Main Author: Keene, B. J.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513
cites cdi_FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513
container_end_page 383
container_issue 8
container_start_page 367
container_title Surface and interface analysis
container_volume 10
creator Keene, B. J.
description High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.
doi_str_mv 10.1002/sia.740100802
format article
fullrecord <record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_sia_740100802</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SIA740100802</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513</originalsourceid><addsrcrecordid>eNp9ULFOwzAUtBBIlMLI7oE1YDtxHI9tgVKpgARFjNaLY1NDSCo7EPr3uGpVMTG909PdvXuH0Dkll5QQdhUcXIqMRFwQdoAGlMg8kZIWh2hAaMYSljF6jE5CeCeRkxb5AMEIe_PtTI9bi7ulweHLW9AGd6YJrm026-BqpyOEpsKuC7h0Dfg1hrpu1wH3rltGD2u8aTa6Ft-Dh-atbRy2ddufoiMLdTBnuzlEL7c3i8ldMn-cziajeaJTTljCOdPSEgulMcA5MAJc6Kpkua2otIwWOYX4mqa0opZzKrkudVoKkhXScJoOUbL11b4NIQZSK-8-Y1BFidr0o2I_at9P5F9s-SsIGmobM2sX9iIhclbEkoZIbGm9q836f0_1PBv9PbAL5EJnfvZK8B8qF6ng6vVhqtj1-ImNxUJN0l9U9YUk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow</title><source>Wiley-Blackwell Materials Science Backfiles</source><creator>Keene, B. J.</creator><creatorcontrib>Keene, B. J.</creatorcontrib><description>High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.740100802</identifier><identifier>CODEN: SIANDQ</identifier><language>eng</language><publisher>Sussex: John Wiley &amp; Sons Ltd</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Surface and interface analysis, 1987-10, Vol.10 (8), p.367-383</ispartof><rights>Copyright © 1987 John Wiley &amp; Sons Ltd.</rights><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513</citedby><cites>FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.740100802$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.740100802$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1421,27924,27925,46438,46862</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7762808$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Keene, B. J.</creatorcontrib><title>A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow</title><title>Surface and interface analysis</title><addtitle>Surf. Interface Anal</addtitle><description>High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNp9ULFOwzAUtBBIlMLI7oE1YDtxHI9tgVKpgARFjNaLY1NDSCo7EPr3uGpVMTG909PdvXuH0Dkll5QQdhUcXIqMRFwQdoAGlMg8kZIWh2hAaMYSljF6jE5CeCeRkxb5AMEIe_PtTI9bi7ulweHLW9AGd6YJrm026-BqpyOEpsKuC7h0Dfg1hrpu1wH3rltGD2u8aTa6Ft-Dh-atbRy2ddufoiMLdTBnuzlEL7c3i8ldMn-cziajeaJTTljCOdPSEgulMcA5MAJc6Kpkua2otIwWOYX4mqa0opZzKrkudVoKkhXScJoOUbL11b4NIQZSK-8-Y1BFidr0o2I_at9P5F9s-SsIGmobM2sX9iIhclbEkoZIbGm9q836f0_1PBv9PbAL5EJnfvZK8B8qF6ng6vVhqtj1-ImNxUJN0l9U9YUk</recordid><startdate>198710</startdate><enddate>198710</enddate><creator>Keene, B. J.</creator><general>John Wiley &amp; Sons Ltd</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>198710</creationdate><title>A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow</title><author>Keene, B. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Keene, B. J.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Keene, B. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow</atitle><jtitle>Surface and interface analysis</jtitle><addtitle>Surf. Interface Anal</addtitle><date>1987-10</date><risdate>1987</risdate><volume>10</volume><issue>8</issue><spage>367</spage><epage>383</epage><pages>367-383</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><coden>SIANDQ</coden><abstract>High quality single crystals of silicon required by the electronics industry are produced in bulk by crystal‐growth‐from‐the‐melt techniques. Temperature and concentration gradients at the free surface of the melt will give rise to surface tension‐driven flow (Marangoni flow), which, if sufficiently large, can lead to crystal defects in the end‐product. The relevance of the liquid surface properties to Marangoni flow is discussed. Published data for the surface tension of silicon and its binary alloys have been collated. Analysis of the data suggests that many of the results quoted for the surface tension of silicon may refer to material contaminated with oxygen. None of the solutes in the binary melts exhibits significant surface‐activity in silicon. Potentially important systems, for which there are no data, have been identified.</abstract><cop>Sussex</cop><pub>John Wiley &amp; Sons Ltd</pub><doi>10.1002/sia.740100802</doi><tpages>17</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0142-2421
ispartof Surface and interface analysis, 1987-10, Vol.10 (8), p.367-383
issn 0142-2421
1096-9918
language eng
recordid cdi_crossref_primary_10_1002_sia_740100802
source Wiley-Blackwell Materials Science Backfiles
subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
title A review of the surface tension of silicon and its binary alloys with reference to Marangoni flow
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T09%3A40%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20review%20of%20the%20surface%20tension%20of%20silicon%20and%20its%20binary%20alloys%20with%20reference%20to%20Marangoni%20flow&rft.jtitle=Surface%20and%20interface%20analysis&rft.au=Keene,%20B.%20J.&rft.date=1987-10&rft.volume=10&rft.issue=8&rft.spage=367&rft.epage=383&rft.pages=367-383&rft.issn=0142-2421&rft.eissn=1096-9918&rft.coden=SIANDQ&rft_id=info:doi/10.1002/sia.740100802&rft_dat=%3Cwiley_cross%3ESIA740100802%3C/wiley_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3502-552c9f0fabeea55a20a57cdb26fd19f21861a100c11d1f55195cbc3b70489e513%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true