Quantification of sputter depth profiles by means of wedge crater sputtering-a new technique for depth scale calibration

An essential part of depth profile quantification is the conversion of sputtering time into depth, for which a simple method is described. It requires an ion gun providing a sufficient fine focusable ion beam. A suitable beam control produces a wedgelike distribution of ion current density in a rast...

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Bibliographic Details
Published in:Surface and interface analysis 1988-11, Vol.13 (2-3), p.167-172
Main Authors: Voigtmann, R., Moldenhauer, W.
Format: Article
Language:English
Subjects:
Analytical chemistry
Chemistry
Exact sciences and technology
General, instrumentation
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Summary:An essential part of depth profile quantification is the conversion of sputtering time into depth, for which a simple method is described. It requires an ion gun providing a sufficient fine focusable ion beam. A suitable beam control produces a wedgelike distribution of ion current density in a raster field which is large compared to the ion beam cross‐section. A “wedge crater” is sputtered in this way in addition to the “normal crater” for depth profiling. The wedge crater profile obtained of surface profilometer measurements provides the sputtering time–depth relation. Moreover the sputtering rate as a function of depth may be deduced from wedge crater profile. Application of the method to SIMS depth profiling in multilayer thin film systems shows its usefulness in depth scale calibration and intensity correction. Small expenditure and universal applicability are advantages in comparison with other methods.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.740130209