Surface stoichiometry determination of SiO x N y thin films by means of XPS

The surface stoichiometry of SiO x N y thin films has been studied by means of x‐ray photoelectron spectroscopy (XPS). The modified Auger parameter, applied on the Si 2p core level and Si KL 2,3 L 2,3 Auger signal, has been used to calculate the surface composition of SiO x N y thin films prepared u...

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Bibliographic Details
Published in:Surface and interface analysis 1994-07, Vol.22 (1-12), p.190-192
Main Authors: Lozzi, L., Passacantando, M., Picozzi, P., Santucci, S., Tomassi, G., Alfonsetti, R., Borghesi, A.
Format: Article
Language:English
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Summary:The surface stoichiometry of SiO x N y thin films has been studied by means of x‐ray photoelectron spectroscopy (XPS). The modified Auger parameter, applied on the Si 2p core level and Si KL 2,3 L 2,3 Auger signal, has been used to calculate the surface composition of SiO x N y thin films prepared using different methods. The results have been compared with those obtained calculating the area under the XPS peaks and the Rutherford backscattering spectroscopy. The good agreement between these data indicates the validity of the modified Auger parameter as an easy and fast method, available in all electron spectroscopy laboratory, to study the surface stoichiometry of Si‐based compounds.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.740220142