Resolving In Situ Specific-Contact, Current-Crowding, and Channel Resistivity in Nanowire Devices: A Case Study with Silver Nanowires

Resistance contributions in a nanowire device are determined accurately. Resistance in silver nanowires, such as conduction‐channel and contact resistance, including current‐crowding effects, reveal both the true nanowire resistivity and the overall device performance, including dissipation and scal...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2011-10, Vol.7 (20), p.2873-2877
Main Authors: Koleśnik, Maria M., Hansel, Stefan, Lutz, Tarek, Kinahan, Niall, Boese, Markus, Krstić, Vojislav
Format: Article
Language:English
Subjects:
contact resistance
current crowding
electronics
Electronics - instrumentation
Electronics - methods
Microscopy, Electron, Transmission
nanodevices
Nanotechnology - methods
nanowires
Nanowires - chemistry
Nanowires - ultrastructure
Silver - chemistry
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Summary:Resistance contributions in a nanowire device are determined accurately. Resistance in silver nanowires, such as conduction‐channel and contact resistance, including current‐crowding effects, reveal both the true nanowire resistivity and the overall device performance, including dissipation and scaling potential. A comprehensive study on the device layout, the contact geometry and, most importantly, the transfer length over which charge injection between contact electrode and nanowire occurs, is performed.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201100600