Memory Devices Using a Mixture of MoS 2 and Graphene Oxide as the Active Layer

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2013-03, Vol.9 (5), p.727-731
Main Authors: Yin, Zongyou, Zeng, Zhiyuan, Liu, Juqing, He, Qiyuan, Chen, Peng, Zhang, Hua
Format: Article
Language:English
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ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201201940