Reconfigurable 2D WSe 2 ‐Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity

• Published in: Small (Weinheim an der Bergstrasse, Germany) Germany), 2021-10, Vol.17 (41)
• Main Authors: Ding, Guanglong, Yang, Baidong, Chen, Ruo‐Si, Mo, Wen‐Ai, Zhou, Kui, Liu, Yang, Shang, Gang, Zhai, Yongbiao, Han, Su‐Ting, Zhou, Ye
• Format: Article
• Language: English
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.202103175

The mimicking of both homosynaptic and heterosynaptic plasticity using a high‐performance synaptic device is important for developing human‐brain–like neuromorphic computing systems to overcome the ever‐increasing challenges caused by the conventional von Neumann architecture. However, the commonly used synaptic devices (e.g., memristors and transistors) require an extra modulate terminal to mimic heterosynaptic plasticity, and their capability of synaptic plasticity simulation is limited by the low weight adjustability. In this study, a WSe 2 ‐based memtransistor for mimicking both homosynaptic and heterosynaptic plasticity is fabricated. By applying spikes on either the drain or gate terminal, the memtransistor can mimic common homosynaptic plasticity, including spiking rate dependent plasticity, paired pulse facilitation/depression, synaptic potentiation/depression, and filtering. Benefitting from the multi‐terminal input and high adjustability, the resistance state number and linearity of the memtransistor can be improved by optimizing the conditions of the two inputs. Moreover, the device can successfully mimic heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity. These highly adjustable and reconfigurable characteristics offer memtransistors more freedom of choice for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems.