Integration of (Poly‐Si/Air)n Distributed Bragg Reflectors in a 150 mm Bulk Micromachined Wafer‐Level MOEMS Fabrication Process

This paper reports the development and integration of (Poly‐Si/Air)n Distributed BRAGG Reflectors (DBR) in a MOEMS Fabry‐Pérot‐Interferometer (FPI) concept. The realized reflectors constitute a promising and resource‐efficient alternative to complex Ion‐Assisted Deposition based DBRs while maintaini...

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Published in:IEEJ transactions on electrical and electronic engineering 2024-05, Vol.19 (5), p.767-772
Main Authors: Helke, Christian, Seiler, Jan, Meinig, Marco, Großmann, Toni Dirk, Bonitz, Jens, Haase, Micha, Zimmermann, Sven, Ebermann, Martin, Kurth, Steffen, Reuter, Danny, Hiller, Karla
Format: Article
Language:English
Subjects:
etalon
Fabry–Pérot interferometer
micro spectrometer
Poly‐Si
reflector
tunable filter
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Summary:This paper reports the development and integration of (Poly‐Si/Air)n Distributed BRAGG Reflectors (DBR) in a MOEMS Fabry‐Pérot‐Interferometer (FPI) concept. The realized reflectors constitute a promising and resource‐efficient alternative to complex Ion‐Assisted Deposition based DBRs while maintaining their advantages. Compared to state of the art MOEMS FPIs the (Poly‐Si/Air)n DBRs can be integrated into two moveable reflector carriers based on two individually fabricated wafers which are bonded. The (Poly‐Si/Air)n DBRs are investigated as (HL) and (HL)2 reflector stacks showing a reflectance above 91% within the wavelength range of 2.8–5.7 μm. © 2023 The Authors. IEEJ Transactions on Electrical and Electronic Engineering published by Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.
ISSN:1931-4973
1931-4981
DOI:10.1002/tee.23960