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Resistance Anomaly in Quasi-One-Dimensional Sulfide BaNbS3+δ

Single-phase specimens of hexagonal BaNbS3+δ(2.93≤3+δ≤3.06) have been successfully prepared by the sulfurization method using CS2. The lattice constants,aandc, are less sensitive to the value ofδin the region of −0.07≤δ≤0.06. BaNbS2.93indicates a semiconductor-to-semiconductor gradual transition aro...

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Bibliographic Details
Published in:Journal of solid state chemistry 1999-01, Vol.142 (1), p.57-62
Main Authors: Kijima, Norihito, Morie, Kenichi, Chikazawa, Susumu, Nishihara, Hironori, Nagata, Shoichi
Format: Article
Language:English
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Summary:Single-phase specimens of hexagonal BaNbS3+δ(2.93≤3+δ≤3.06) have been successfully prepared by the sulfurization method using CS2. The lattice constants,aandc, are less sensitive to the value ofδin the region of −0.07≤δ≤0.06. BaNbS2.93indicates a semiconductor-to-semiconductor gradual transition around 100 K. On the other hand, BaNbS3+δ(2.96≤3+δ≤3.06) shows hump-shaped anomalous behaviors in the resistivity. Although the anomalies in the electrical resistivity have been observed, all the samples have indicated no anomaly in their magnetic susceptibility. The magnetic susceptibilities are nearly temperature independent with extremely small Curie-like behavior at low temperatures. BaNbS2.98does not undergo a structural phase transition and there is no change in symmetry down to 80 K, above which the hump-shaped anomaly is clearly found. The relationship in the resistance anomaly between BaNbS3+δand BaVS3seems to be significant and to have an important role in clarifying the mechanism of these anomalies.
ISSN:0022-4596
1095-726X
DOI:10.1006/jssc.1998.7985