Transport Properties of Bi2−xInxSe3 Single Crystals

• Published in: Journal of solid state chemistry 2001-09, Vol.160 (2), p.474-481
• Main Authors: Navrátil, J., Plecháček, T., Horák, J., Karamazov, S., Lošt'ák, P., Dyck, J.S., Chen, W., Uher, C.
• Format: Article
• Language: English
• Subjects: Bi2Se3; carrier scattering; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; indium incorporation; Low-field transport and mobility; piezoresistance; narrow-gap semiconductors; Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves; Physics; reflectance; tetradymite structure; Thermoelectric and thermomagnetic effects; transport properties; Transport properties of condensed matter (nonelectronic)
• ISSN: 0022-4596; 1095-726X
• DOI: 10.1006/jssc.2001.9323

The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2−xInxSe3 (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed.