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Pyroelectric effect in semiconductor heterostructures
In heterostructures made of dielectric or semiconductor materials a reduction in symmetry can lead to a pyroelectric effect in the heterostructure, even though the effect is forbidden by symmetry in the bulk-crystal constituent materials. The pyroelectric effect resulting from an applied electric fi...
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Published in: | Superlattices and microstructures 1993-09, Vol.14 (2-3), p.149-152 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | In heterostructures made of dielectric or semiconductor materials a reduction in symmetry can lead to a pyroelectric effect in the heterostructure, even though the effect is forbidden by symmetry in the bulk-crystal constituent materials. The pyroelectric effect resulting from an applied electric field and a built-in strain is estimated for the cases of a [100] and [111] growth-axis GaAs-AlGaAs and GaAs-InGaAs quantum well. The effect is shown to produce pyroelectric coefficients on the order of pi = 10-6 C/m2 K, which is comparable to some bulk-crystal pyroelectric materials. |
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ISSN: | 0749-6036 1096-3677 |
DOI: | 10.1006/spmi.1993.1116 |