A hybrid model to calculate the forward delay time of heterojunction bipolar transistors

The forward delay time (τF) of heterojunction bipolar transistors (HBTs) is calculated using a hybrid model of carrier transport. A rigorous quantum-mechanical treatment of electron tunneling and thermionic emission across the spike at the emitter-base junction is used to determine the energy of the...

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Bibliographic Details
Published in:Superlattices and microstructures 1995-07, Vol.18 (1), p.1-8
Main Authors: Kumar, T., Cahay, M., Shi, S., Roenker, K., Stanchina, W.E.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The forward delay time (τF) of heterojunction bipolar transistors (HBTs) is calculated using a hybrid model of carrier transport. A rigorous quantum-mechanical treatment of electron tunneling and thermionic emission across the spike at the emitter-base junction is used to determine the energy of the electron flux injected into the base region. This flux is used as an initial distribution in a regional Monte Carlo simulator to model electron transport from base to sub-collector. In this paper, we estimate the base transit time using the impulse response technique and the collector delay time using the expression of Laux and Lai (IEEE Electron Device Letters, 11, 174, 1990). Improvements to the hybrid model proposed here to reduce some of the discrepancies between measured and calculated values of ƒτ for some InAlAs/InGaAs and InP/InGaAs structures reported in the literature are discussed.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1995.1082