Spatial correlation effects of charged impurities on electron mobility in δ-doped quantum barriers

The quantum mobility has been measured in δ-doped GaAs/AlxGa1−xAs/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlation e...

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Bibliographic Details
Published in:Superlattices and microstructures 1997-01, Vol.21 (2), p.237-240
Main Authors: Koenraad, P.M., Shi, J.M., van de Stadt, A.F.W., Smets, A., Wolter, J.H., Peeters, F.M., Devreese, J.T., Perenboom, J.A.A.J.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
DX centers
Electrical properties of specific thin films
electron mobility
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Iii-v semiconductors
low dimensions
Low-field transport and mobility
piezoresistance
Physics
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Summary:The quantum mobility has been measured in δ-doped GaAs/AlxGa1−xAs/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlation effects in the mobility calculations.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0188