DX-center and pressure effects on the electronic structure of a δ-doped quantum barrier

A theoretical study is presented of the electronic structure of a δ-doped quantum barrier. Three models are used to investigate the influence of DX centers on this electronic structure in the absence and in the presence of spatial correlations of charged impurities. The importance of introducing a q...

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Bibliographic Details
Published in:Superlattices and microstructures 1998-01, Vol.23 (1), p.83-86
Main Authors: Shi, J.M., Peeters, F.M., Devreese, J.T., Koenraad, P.M., van de Stadt, A.F.W., Wolter, J.H.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
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Summary:A theoretical study is presented of the electronic structure of a δ-doped quantum barrier. Three models are used to investigate the influence of DX centers on this electronic structure in the absence and in the presence of spatial correlations of charged impurities. The importance of introducing a quantum barrier and/or applying hydrostatic pressure to experimentally observe DX-center effects is shown.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0327