Nonequilibrium diagrams of a single quantum well laser

We studied the operation of a single quantum well laser by examining the tested device with a scanning electron microscope (SEM) working in differential voltage contrast (DVC) mode. A MOCVD-grown structure consists of 60Å of In0.2Ga0.8As, positioned between layers of GaAs, each 100Å thick. The speci...

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Bibliographic Details
Published in:Superlattices and microstructures 1998-05, Vol.23 (5), p.1063-1066
Main Authors: Mil'shtein, S., Therrien, J.M., Chin, A.K., Zarrabi, J.H.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We studied the operation of a single quantum well laser by examining the tested device with a scanning electron microscope (SEM) working in differential voltage contrast (DVC) mode. A MOCVD-grown structure consists of 60Å of In0.2Ga0.8As, positioned between layers of GaAs, each 100Å thick. The specially cleaved laser structure was forward biased to get through the inverse population, threshold, and stimulated emission mode. In various modes of operation of the laser, thein situDVC profiling of the quasi-Fermi energy across the device was performed. The intensity of the laser emission was simultaneously measured by a detector positioned in the SEM chamber. Starting with an equilibrium energy diagram of an unbiased laser, we reconstructed the complete nonequilibrium energy diagrams from the experimental profile of quasi-Fermi levels.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0584