Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors

A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulation-doped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the po...

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Published in:Superlattices and microstructures 1999-01, Vol.25 (1-2), p.289-293
Main Authors: Manzoli, J.E., Romero, M.A., Hipólito, O.
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creator Manzoli, J.E.
Romero, M.A.
Hipólito, O.
description A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulation-doped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the position dependent lattice constant and electron effective mass. The inclusion of these strain-related energy terms is shown to be paramount to achieve good agreement between theory and experimental data for theC–Vcharacteristics of pseudomorphic MODFETs at the forward bias range.
doi_str_mv 10.1006/spmi.1998.0650
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title Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors
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