Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures

The operational and emission characteristics of injection lasers based on nonperiodic heterostructures are investigated. A study of the temperature dependence of threshold currents suggests that carrier leakage does not affect the heterolaser threshold currents up to room temperature; however, consi...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Soviet Laser Research 1984-05, Vol.5 (3), p.349-362
Main Authors: Dolginov, M. L., Drakin, A. E., Druzhinina, L. V., Eliseev, P. G., Mil'vidskii, M. G., Sverdlov, B. N., Skripkin, V. A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The operational and emission characteristics of injection lasers based on nonperiodic heterostructures are investigated. A study of the temperature dependence of threshold currents suggests that carrier leakage does not affect the heterolaser threshold currents up to room temperature; however, considerable variations in threshold current values were observed for structures grown from different heteroepitaxial plates. In a InGaAsSb/GaSb laser an 'antiwaveguide' phenomenon was observed, where an increasing carrier density caused the narrowing of the directivity pattern of the laser emission in the plane perpendicular to the p-n junction; the phenomenon is suggested to be useful in some lasing modes, such as nonwaveguide diode modes and the transfer of radiation to a waveguide based on a wider-band material with a larger index of refraction.
ISSN:0270-2010
1573-8760
DOI:10.1007/BF01120625