Loading…

Positron-trap centers in neutron-irradiated silicon containing hydrogen

Saved in:

Bibliographic Details
Published in:	Applied physics. A, Materials science & processing Materials science & processing, 1995, Vol.60 (1), p.81-85
Main Authors:	MENG, X. T, ZECCA, A, BRUSA, R. S
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Neutron radiation effects Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physical radiation effects, radiation damage Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Positron annihilation Structure of solids and liquids crystallography
Citations:	Items that this one cites
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by
cites	cdi_FETCH-LOGICAL-c219t-e6f09ee7303bd0dc65f36d81a882d6e603c098b5a658b282de746fe36b8816493
container_end_page	85
container_issue	1
container_start_page	81
container_title	Applied physics. A, Materials science & processing
container_volume	60
creator	MENG, X. T ZECCA, A BRUSA, R. S
description
doi_str_mv	10.1007/BF01577618
format	article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1007_BF01577618</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3550176</sourcerecordid><originalsourceid>FETCH-LOGICAL-c219t-e6f09ee7303bd0dc65f36d81a882d6e603c098b5a658b282de746fe36b8816493</originalsourceid><addsrcrecordid>eNpFUMFKxDAUDKJgXb34BT14EqovTfuSHnVxV2FBD3ouafK6RmpaknjYv7fuig4MA8PMHIaxSw43HEDe3q-A11IiV0cs45UoC0ABxyyDppKFEg2esrMYP2BGVZYZW7-M0aUw-iIFPeWGfKIQc-dzT19734WgrdOJbB7d4Mzo85lJO-_8Nn_f2TBuyZ-zk14PkS5-dcHeVg-vy8di87x-Wt5tClPyJhWEPTREUoDoLFiDdS_QKq6VKi0SgjDQqK7WWKuunD2SFfYksFOKY9WIBbs-7Jowxhiob6fgPnXYtRzanwva_wvm8NUhPOlo9NAH7Y2Lfw1R18Alim_Mc1tA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Positron-trap centers in neutron-irradiated silicon containing hydrogen</title><source>Springer Online Journals Archive Complete</source><creator>MENG, X. T ; ZECCA, A ; BRUSA, R. S</creator><creatorcontrib>MENG, X. T ; ZECCA, A ; BRUSA, R. S</creatorcontrib><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/BF01577618</identifier><language>eng</language><publisher>Berlin: Springer</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Neutron radiation effects ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other interactions of matter with particles and radiation ; Physical radiation effects, radiation damage ; Physics ; Point defects (vacancies, interstitials, color centers, etc.) and defect clusters ; Positron annihilation ; Structure of solids and liquids; crystallography</subject><ispartof>Applied physics. A, Materials science & processing, 1995, Vol.60 (1), p.81-85</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c219t-e6f09ee7303bd0dc65f36d81a882d6e603c098b5a658b282de746fe36b8816493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,4010,27904,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3550176$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MENG, X. T</creatorcontrib><creatorcontrib>ZECCA, A</creatorcontrib><creatorcontrib>BRUSA, R. S</creatorcontrib><title>Positron-trap centers in neutron-irradiated silicon containing hydrogen</title><title>Applied physics. A, Materials science & processing</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Neutron radiation effects</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other interactions of matter with particles and radiation</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</subject><subject>Positron annihilation</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFUMFKxDAUDKJgXb34BT14EqovTfuSHnVxV2FBD3ouafK6RmpaknjYv7fuig4MA8PMHIaxSw43HEDe3q-A11IiV0cs45UoC0ABxyyDppKFEg2esrMYP2BGVZYZW7-M0aUw-iIFPeWGfKIQc-dzT19734WgrdOJbB7d4Mzo85lJO-_8Nn_f2TBuyZ-zk14PkS5-dcHeVg-vy8di87x-Wt5tClPyJhWEPTREUoDoLFiDdS_QKq6VKi0SgjDQqK7WWKuunD2SFfYksFOKY9WIBbs-7Jowxhiob6fgPnXYtRzanwva_wvm8NUhPOlo9NAH7Y2Lfw1R18Alim_Mc1tA</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>MENG, X. T</creator><creator>ZECCA, A</creator><creator>BRUSA, R. S</creator><general>Springer</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1995</creationdate><title>Positron-trap centers in neutron-irradiated silicon containing hydrogen</title><author>MENG, X. T ; ZECCA, A ; BRUSA, R. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c219t-e6f09ee7303bd0dc65f36d81a882d6e603c098b5a658b282de746fe36b8816493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Neutron radiation effects</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other interactions of matter with particles and radiation</topic><topic>Physical radiation effects, radiation damage</topic><topic>Physics</topic><topic>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</topic><topic>Positron annihilation</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MENG, X. T</creatorcontrib><creatorcontrib>ZECCA, A</creatorcontrib><creatorcontrib>BRUSA, R. S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MENG, X. T</au><au>ZECCA, A</au><au>BRUSA, R. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Positron-trap centers in neutron-irradiated silicon containing hydrogen</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><date>1995</date><risdate>1995</risdate><volume>60</volume><issue>1</issue><spage>81</spage><epage>85</epage><pages>81-85</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><cop>Berlin</cop><pub>Springer</pub><doi>10.1007/BF01577618</doi><tpages>5</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0947-8396
ispartof	Applied physics. A, Materials science & processing, 1995, Vol.60 (1), p.81-85
issn	0947-8396 1432-0630
language	eng
recordid	cdi_crossref_primary_10_1007_BF01577618
source	Springer Online Journals Archive Complete
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Neutron radiation effects Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physical radiation effects, radiation damage Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Positron annihilation Structure of solids and liquids crystallography
title	Positron-trap centers in neutron-irradiated silicon containing hydrogen
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T00%3A42%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Positron-trap%20centers%20in%20neutron-irradiated%20silicon%20containing%20hydrogen&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=MENG,%20X.%20T&rft.date=1995&rft.volume=60&rft.issue=1&rft.spage=81&rft.epage=85&rft.pages=81-85&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/BF01577618&rft_dat=%3Cpascalfrancis_cross%3E3550176%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c219t-e6f09ee7303bd0dc65f36d81a882d6e603c098b5a658b282de746fe36b8816493%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true