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Implantation site of boron in heavily doped silicon: A β-NMR study

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Bibliographic Details
Published in:Hyperfine interactions 1990-08, Vol.60 (1-4), p.769-772
Main Authors: Metzner, H., Sulzer, G., Seelinger, W., Ittermann, B., Erank, H. -P., Fischer, B., Ergezinger, K. -H., Dippel, R., Diehl, E., Stöckmann, H. -J., Ackermann, H.
Format: Article
Language:English
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ISSN:0304-3843
1572-9540
DOI:10.1007/BF02399866